ИС управления транзисторами IX4R11P7
Товар отсутствует на складе.
Товар можно оформить под заказ.
Current - peak output (source, sink) | 4A, 4A |
Driven configuration | Half-Bridge |
Gate type | IGBT, N-Channel MOSFET |
High side voltage - max (bootstrap) | 650V |
Input type | Non-Inverting |
Logic voltage - vil, vih | 6V, 7V |
Mounting type | Through Hole |
Number of drivers | 2 |
Operating temperature | -40°C ~ 150°C (TJ) |
Package / case | 14-DIP (0.300", 7.62mm) |
Packaging | Tube |
Part status | Obsolete |
Rise / fall time (typ) | 23ns, 22ns |
Supplier device package | 14-DIP |
Voltage - supply | 10 V ~ 35 V |
Производитель | IXYS |